Kink Effect in <formula formulatype="inline"> <tex Notation="TeX">${\rm S}_{22}$</tex></formula> for GaN and GaAs HEMTs
نویسندگان
چکیده
منابع مشابه
Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence?
Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation bet...
متن کاملDegradation Mechanisms of GaN HFETs: Comparison With GaAs Based HEMTs
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems to be the most promising. While GaN device and circuit technology is poised to break out in the commercial arena...
متن کاملatedA GaN/GaN HEMTs
Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
متن کاملTechnology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
متن کاملGaN HEMTs and MMICs for space applications
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in order to realize transistors and integrated circuits ranging from high-voltage transistors for voltage conversion in efficient power switches, L/S-band...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Microwave and Wireless Components Letters
سال: 2015
ISSN: 1531-1309,1558-1764
DOI: 10.1109/lmwc.2015.2409989